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preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 1 general description the AP3512E is a 500khz fixed frequency, current mode, pwm synchronous buck (step-down) dc-dc converter, capable of driving a 2a load with high efficiency, excellent line and load regulation. the AP3512E exhibits high effi ciency at light load. the device integrates n-channel power mosfet switch with low on-resistance. current mode control provides fast transient re sponse and cycle-by-cycle current limit. the AP3512E employs complete protection to ensure system security, including output over voltage protection, input under voltage lock out, programmable soft-start, over temperature protection and hiccup mode short circuit protection. this ic is available in so ic-8 and psop-8 packages. features ? input voltage range: 4.5v to 18v ? fixed 500khz frequency ? high efficiency at light load ? output current: 2a ? current mode control ? built-in over current protection ? built-in thermal shutdown function ? built-in uvlo function ? built-in over voltage protection ? programmable soft-start ? hiccup mode scp applications ? monitor ? tv ? stb ? datacom figure 1. package types of AP3512E soic-8 psop-8
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 2 pin configuration m package mp package (soic-8) (psop-8) figure 2. pin configuration of AP3512E (top view) pin description pin number pin name function 1 bs bootstrap pin. a bootstrap capacitor is connected between the bs pin and sw pin. the voltage across the bootstrap capacitor drives the internal high-side nmos switch. 2 in supply input pin. a capacitor should be connected between the in pin and gnd pin to keep the dc input voltage constant. 3 sw power switch output pin. this pin is connected to the inductor and bootstrap capacitor. 4 gnd ground pin 5 fb feedback pin. this pin is conn ected to an external resistor divider to program the system output voltage. when the fb pin voltage exceeds 1.1v, the over voltage protection is triggered. when the fb pin voltage is below 0.3v, the oscillator frequency is lowered to realize short circuit protection. 6 comp compensation pin. this pin is the output of the transconductance error amplifie r and the input to the current comparator. this pin is used to compensate the control loop. connect a series rc network from this pin to gnd pin. in some cases, an additional capacitor from this pin to gnd pin is required. 7 en enable input. en is a digital input that turns the regulator on or off. drive en high to turn on the regulator, drive it low to turn off. pull up with 100k ? resistor for automatic startup. 8 ss soft-start control inpu t pin. ss controls the soft start period. connect a capacitor from ss to gnd to set the soft-start period. a 0.1f capacitor sets th e soft-start period to 15ms. to disable the soft-start feature, leave ss unconnected. ep exposed pad. it should be connected to gnd in pcb layout 1 2 3 4 8 7 6 5 bs in sw gnd ss en comp fb 1 2 3 4 8 7 6 5 bs in sw gnd ss en comp fb ep
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of AP3512E ordering information AP3512E - circuit type g1: green package m: soic-8 mp: psop-8 package temperature range part number marking id packing type soic-8 -40 to 85 c AP3512Em-g1 3512em-g1 tube AP3512Emtr-g1 3512em-g1 tape & reel psop-8 -40 to 85 c AP3512Emptr-g1 3512emp-g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. blank: tube tr: tape & reel
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 4 absolute maximum ratings (note 1) parameter symbol value unit in pin voltage v in -0.3 to 20 v en pin voltage v en -0.3 to v in v sw pin voltage v sw 21 v bs pin voltage v bs -0.3 to v sw +6 v fb pin voltage v fb -0.3 to 6 v comp pin voltage v comp -0.3 to 6 v ss pin voltage v ss -0.3 to 6 v operating junction temperature t j 150 oc storage temperature t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc thermal resistance (junction to ambient) ja soic-8 105 oc/w psop-8 60 esd (human body model) v hbm 2000 v esd (machine model) v mm 200 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit input voltage v in 4.5 18 v operating ambient temperature t a -40 85 oc
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 5 electrical characteristics v in =v en =12v, v out =3.3v, t a =25oc, unless otherwise specified. parameter symbol conditions min typ max unit supply voltage (in pin) input voltage v in 4.5 18 v quiescent current i q v fb =1v, v en =3.3v 1.2 1.4 ma shutdown supply current i shdn v en =0v 0.1 1.0 a under voltage lockout input uvlo threshold v uvlo v in rising 3.65 4.0 4.25 v input uvlo hysteresis v hys 0.2 v enable (en pin) en shutdown threshold voltage 1.1 1.5 2 v en shutdown threshold voltage hysteresis (note 2) 350 mv en lockout threshold voltage 2.2 2.5 2.7 v en lockout hysteresis 210 mv voltage reference (fb pin) feedback voltage v fb 0.907 0.925 0.943 v feedback over voltage threshold v fbov 1.1 v feedback bias current i fb v fb =1v -0.1 0.1 a mosfet high-side switch on-resistance (note 3) r dsonh i sw =0.2a&0.7a 100 m ? low-side switch on-resistance (note 3) r dsonl i sw =-0.2a&-0.7a 100 m ? current limit high-side switch leakage current i leakh v in =18v, v en =0v, v s w =0v 0.1 10 a high-side switch current limit i limh 4.3 5.6 a low-side switch current limit i liml from drain to source 50 ma switching regulator oscillator frequency f osc1 410 500 590 khz short circuit oscillator frequency f osc2 180 khz
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 6 electrical characteristics (continued) v in =v en =12v, v out =3.3v, t a =25oc, unless otherwise specified. parameter symbol conditions min typ max unit max. duty cycle d max v fb =0.85v 90 % min. duty cycle d min v fb =1v 0 % error amplifier error amplifier voltage gain (note 2) a ea 400 v/v error amplifier tr ansconductance g ea 800 a/v comp to current sense transconductance g cs 5.2 a/v thermal shutdown thermal shutdown (note 2) t otsd 160 oc thermal shutdown hysteresis (note 2) t hys 30 oc soft start (ss pin) soft-start time (note 2) t ss c ss =0.1 f 15 ms soft-start current 5 a note 2: not tested, guaranteed by design. note 3: r dson = sw2 sw1 sw2 sw1 i - i v - v
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 7 typical performance characteristics v in =12v, v out =3.3v, l=4.7h, t a =25c, unless otherwise noted. figure 4. efficiency vs. load current figure 5. quiescent current vs. temperature figure 6. feedback voltage vs. temperature figure 7. output ripple (i out =2a) 0.01 0.1 1 10 20 30 40 50 60 70 80 90 100 v in =12v v out =3.3v, l=4.7 h v out =5.0v, l=6.8 h efficiency (%) load current (a) v sw (10v/div) v out-ac (20mv/div) i l (1a/div) -50-25 0 255075100125150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 quiescent current (ma) temperature ( o c) -50 -25 0 25 50 75 100 125 150 0.6 0.7 0.8 0.9 1.0 1.1 1.2 feedback voltage (v) temperature ( o c) time(1s/div)
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 8 typical performance characteristics (continued) v in =12v, v out =3.3v, l=4.7h, t a =25c, unless otherwise noted. figure 8. load transient response (i out =1a to 2a) figure 9. load transient response (i out =0.2a to 2a) figure 10. power on from vin (i out =2a) figure 11. power off from vin (i out =2a) v out-ac (100mv/div) i out (1a/div) v out-ac (100mv/div) i out (1a/div) time(100s/div) time(100s/div) v in (10v/div) v out (2v/div) i l (1a/div) time(3.20ms/div) v in (10v/div) v out (2v/div) i l (1a/div) time(3.20ms/div)
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 9 typical performance characteristics (continued) v in =12v, v out =3.3v, l=4.7h, t a =25c, unless otherwise noted. figure 12. power on from en (i out =2a) figure 13. power off from en (i out =2a) figure 14. short circuit protection (i out =2a) figure 15. short circuit protection recovery (i out =2a) v en (2v/div) v out (2v/div) i l (1a/div) v en (2v/div) v out (2v/div) i l (1a/div) time(3.20ms/div) time(3.20ms/div) v ss (1v/div) v out (2v/div) v sw (10v/div) i l (2a/div) v ss (1v/div) v out (2v/div) v sw (10v/div) i l (2a/div) time(64ms/div) time(64ms/div)
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 10 typical application figure 16. typical application circuit of AP3512E
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 11 mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
preliminary datasheet 18v, 2a synchronous dc-dc buck conv erter AP3512E dec. 2012 rev. 1. 1 bcd semiconductor manufacturing limited 12 mechanical dimensions (continued) psop-8 unit: mm(inch) 3.202(0.126) 3.402(0.134)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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